SK hynix has delivered HBM4E samples to key customers. This 12-layer stacked flagship memory has a per-pin speed of 16Gbps, over 20% improved power efficiency, 17% reduced thermal resistance, and a single-die capacity of 48GB. Upon this news, the company's stock price surged 7.3% to a record high during trading hours, as the market's expectations for its continued leadership in the AI memory race soared.
SK hynix announced that it has delivered next-generation AI memory chip HBM4E samples to key customers, driving the company's stock price to a historic high.
In a statement on its official website on Thursday, SK hynix stated that this 12-layer stacked HBM4E product has a per-pin maximum data processing speed of 16Gbps, over 20% improved power efficiency compared to the previous generation, and a 17% reduction in thermal resistance through advanced packaging technology. SK hynix stated that it will collaborate closely with partners to ensure timely product mass production.
This sample shipment marks SK hynix's accelerated technological iteration in the high-bandwidth memory field, further solidifying its core position in the AI infrastructure supply chain and providing the market with the latest signal of the company's continued leadership in the HBM technology roadmap.
Following the announcement, SK hynix's stock price rose 7.3% on the South Korean trading platform, reaching a new all-time high during trading hours. This increase reflects the market's strong expectations for the company's continued lead in the AI memory race. From HBM3 and HBM3E to HBM4, SK hynix has established a complete delivery capability from mass production to supply. The timely shipment of the HBM4E samples further reinforces investors' confidence in its technological fulfillment capabilities.
Performance and Efficiency Soar
SK hynix disclosed in a statement that the 12-layer HBM4E has achieved significant improvements in both performance and power efficiency.
Specifically, this product has a per-pin maximum data processing speed of 16Gbps, over 20% improved power efficiency compared to the previous generation. At the same time, the HBM4E, through the latest interface design and optimization, effectively reduces data transmission latency and maintains stable operation in high-bandwidth environments. These features directly enhance data processing capabilities in AI training and inference scenarios, helping customers improve operational efficiency in AI data centers and large-scale computing systems.
Advanced Packaging Technology Supports 48GB Capacity
On the packaging technology front, SK hynix has adopted Advanced MR-MUF (Massive Reflow Mold Under Fill) technology to achieve a single-die capacity of 48GB in a 12-layer stack structure, ensuring structural stability.
The MR-MUF process protects the circuit by injecting liquid underfill material between the chips. SK hynix has further optimized this process, reducing the thermal resistance of HBM4E by 17% compared to the previous generation HBM4, thereby ensuring the stable operation of the memory chips in high-performance computing environments. This technological breakthrough is particularly crucial for AI data centers operating under continuous high loads.
SK hynix President and Chief Development Officer Ahn Hyun stated in a declaration, "Based on HBM4E, SK hynix has established a foundation to strengthen its leadership in AI with market-leading technological capabilities and manufacturing expertise. Through close collaboration with our partners, we will deliver the required value to the market and further solidify our technological leadership as a full-stack AI memory creator."
SK hynix emphasized that the company's prior experience in the mass production and supply of HBM3, HBM3E, and HBM4 was a critical foundation for the on-time delivery of HBM4E samples. The company stated that it will rely on its market-proven product reliability and supply capabilities to support the development of next-generation infrastructure and help address the performance bottlenecks of AI systems.
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